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1.
Nanomaterials (Basel) ; 13(17)2023 Sep 01.
Artigo em Inglês | MEDLINE | ID: mdl-37686977

RESUMO

Organic cocrystals, which are assembled by noncovalent intermolecular interactions, have garnered intense interest due to their remarkable chemicophysical properties and practical applications. One notable feature, namely, the charge transfer (CT) interactions within the cocrystals, not only facilitates the formation of an ordered supramolecular network but also endows them with desirable semiconductor characteristics. Here, we present the intriguing ambipolar CT properties exhibited by nanosheets composed of single cocrystals of C70/ferrocene (C70/Fc). When heated to 150 °C, the initially ambipolar monoclinic C70/Fc nanosheet-based field-effect transistors (FETs) were transformed into n-type face-centered cubic (fcc) C70 nanosheet-based FETs owing to the elimination of Fc. This thermally induced alteration in the crystal structure was accompanied by an irreversible switching of the semiconducting behavior of the device; thus, the device transitions from ambipolar to unipolar. Importantly, the C70/Fc nanosheet-based FETs were also found to be much more thermally stable than the previously reported C60/Fc nanosheet-based FETs. Furthermore, we conducted visible/near-infrared diffuse reflectance and photoemission yield spectroscopies to investigate the crucial role played by Fc in modulating the CT characteristics. This study provides valuable insights into the overall functionality of these nanosheet structures.

2.
RSC Adv ; 12(30): 19548-19553, 2022 Jun 29.
Artigo em Inglês | MEDLINE | ID: mdl-35865602

RESUMO

In recent years, supramolecular cocrystals containing organic donors and acceptors have been explored as active components in organic field-effect transistors (FETs). Herein, we report the synthesis of novel single-cocrystal nanoribbons with ambipolar charge transport characteristics from C70 and 5,10,15,20-tetrakis(3,5-dimethoxyphenyl)porphyrin (3,5-TPP) in a 3 : 2 ratio. The C70/3,5-TPP nanoribbons exhibited a new strong absorption band in the near-infrared region, indicating the presence of charge-transfer interactions between C70 and 3,5-TPP in the cocrystals. We elucidated the mechanism of the charge-transport properties of the nanoribbons using photoemission yield spectroscopy in air and theoretical calculations. A strong interaction between porphyrins in the one-dimensional porphyrin chains formed in C70/3,5-TPP nanoribbons, which was confirmed by single-crystal X-ray diffraction, plays a crucial role in their hole transport properties.

3.
ACS Comb Sci ; 22(9): 433-439, 2020 09 14.
Artigo em Inglês | MEDLINE | ID: mdl-32659073

RESUMO

The correlation between the crystal structure and valence band structure of a (GaxIn1-x)2O3 solid solution system was investigated by using combinatorial synthesis. At a low Ga content of (GaxIn1-x)2O3 with a single-phase cubic In2O3 crystal structure, a surface electron accumulation layer (SEAL), which is an important electrical phenomenon in In2O3, was confirmed. When the Ga content increased to approximately x = 0.4, mixed crystal structures of Ga2O3 and In2O3 were produced. Above x = 0.5, the dominant valence band structure was attributed to Ga2O3, the SEAL disappeared, and the sheet resistance increased greatly by 5 orders of magnitude or more. The in-gap state and valence band structure of the (GaxIn1-x)2O3 solid solution system were strongly affected by Ga2O3; however, the valence band maximum position shifted to a higher binding energy.


Assuntos
Técnicas de Química Combinatória , Germânio/química , Índio/química , Oxigênio/química , Soluções
4.
ACS Comb Sci ; 21(4): 310-315, 2019 04 08.
Artigo em Inglês | MEDLINE | ID: mdl-30790519

RESUMO

High-throughput and combinatorial materials science methods were used to investigate the dependence of the work function in the Ni-Si system on the B content (0-30 at. %). Alloying of NiSi is used to adapt its properties to suit the needs as a gate electrode material. Thin-film materials libraries were fabricated and investigated with respect to their structural and electrical properties. Further the work function values of selected samples in the region of interest were analyzed. The results show that the work function can be adjusted between 4.86 eV (B = 4.2 at. %) and 5.16 eV (B = 29.2 at. %) for (NiSi)B x.


Assuntos
Boro/química , Condutividade Elétrica , Níquel/química , Silício/química , Técnicas de Química Combinatória/métodos , Estrutura Molecular , Bibliotecas de Moléculas Pequenas/química , Relação Estrutura-Atividade , Propriedades de Superfície
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